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| MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A IC ................................................................... 300A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 930.25 3-M6 NUTS G2 4 48 0.25 62 E2 E1 6 C2E1 E2 C1 G1 21.5 25 25 24 4-6.5 MOUNTING HOLES 18 14 7 18 14 7 18 14 2.8 7.5 8.5 4 TAB #110 t=0.5 E2 G2 C2E1 LABEL 22.2 E2 C1 G1 E1 CIRCUIT DIAGRAM 30 +1.0 -0.5 17.5 6 15 30 Feb. 2009 1 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 80C*1 Pulse Pulse TC = 25C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1200 20 300 600 300 600 1890 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W C C Vrms N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = 15V RG = 1.0, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Tj = 25C Tj = 125C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 Limits Typ. -- 7 -- 2.1 2.4 -- -- -- 1350 -- -- -- -- -- 9.0 -- -- -- 0.02 -- Max. 1 8 0.5 3.0 -- 47 4 0.9 -- 550 180 600 350 250 -- 3.8 0.066 0.12 -- 16 Unit mA V A V nF nC ns ns C V K/W *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 600 500 400 300 VGE = 20V 4 15 13 Tj = 25C 12 VGE = 15V 3 2 11 200 100 0 10 9 0 2 4 6 8 10 1 Tj = 25C Tj = 125C 0 0 100 200 300 400 500 600 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 IC = 600A IC = 300A 102 7 5 3 2 4 2 IC = 120A 0 6 8 10 12 14 16 18 20 Tj = 25C Tj = 125C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 Cies SWITCHING TIME (ns) 5 3 2 td(off) tf td(on) 101 7 5 3 2 Coes 102 7 5 3 2 100 7 5 3 2 tr Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive load 3 5 7 102 2 3 5 7 103 2 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c') (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 trr Irr 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load 23 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.066K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.12K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 102 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 101 7 5 3 2 Esw(off) Esw(on) 100 1 10 Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive load C snubber at bus 5 7 102 2 3 5 7 103 Conditions: VCC = 600V VGE = 15V 3 IC = 300A Tj = 125C 2 Inductive load C snubber at bus 2 10 7 5 7 5 3 2 Esw(on) Esw(off) 2 3 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) 102 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) VCC = 600V VGE = 15V 3 RG = 1.0 Tj = 125C 2 Inductive load C snubber at bus 101 5 7 5 3 2 7 Conditions: 5 3 2 Err 101 7 5 3 2 Err Conditions: VCC = 600V VGE = 15V IE = 300A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 100 1 10 2 3 5 7 102 2 3 5 7 103 100 0 10 EMITTER CURRENT IE (A) GATE RESISTANCE RG () Feb. 2009 4 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 300A 16 VCC = 400V VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Feb. 2009 5 |
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